The HEX‑RM‑150 is a high-precision, research-grade Hall Effect experimental setup designed for advanced analysis of semiconductors under varying magnetic fields. With enhanced accuracy and stability, this model is ideal for universities, R&D laboratories, and institutions focused on semiconductor characterization and magneto-transport phenomena.

It includes a high-sensitivity Hall probe (Ge or GaAs), a 150 mm pole gap electromagnet, a digital Gaussmeter, and a constant current source with excellent stability. The wider pole gap enables testing larger samples and achieving uniform magnetic fields for more consistent results. Optional computer interface software allows for automated data logging, real-time graph plotting, and analysis of Hall voltage, carrier concentration, mobility, and Hall coefficient.

This model supports both educational and publication-level research needs in the field of solid-state physics and electronic materials.

🔧 Key Features

• Research-grade setup with 150 mm pole gap electromagnet

• High-sensitivity Hall probe (Ge or GaAs)

• Digital Gaussmeter for precise magnetic field measurement

• Regulated constant current source

• Optional PC interface for real-time data acquisition and analysis

• Supports accurate determination of carrier type, concentration, mobility, and Hall coefficient

• Ideal for large-sample testing and uniform magnetic field exposure

  Applications

• Advanced study of Hall Effect in semiconductors and semimetals

• Research on carrier transport mechanisms

• Determination of electronic properties like mobility and concentration

• Material testing in physics and electronics research labs

• Development and testing of semiconductor devices