The MRB‑11N is a research-grade setup specifically engineered for the in-depth study of magnetoresistance in bismuth under controlled laboratory conditions. This apparatus enables users to explore how the electrical resistance of a bismuth sample varies in response to an externally applied magnetic field, which is fundamental in understanding charge carrier behavior in low-dimensional or anisotropic semimetals.

The MRB‑11N is equipped with a high-purity bismuth sample mounted on a thermally stable base using a four-probe configuration to eliminate contact resistance errors. It supports integration with a digital Gaussmeter, electromagnet, and nano-voltmeter (optional), providing precise control and accurate data acquisition across varying field intensities.

This setup is tailored for postgraduate labs, research institutions, and R&D applications in material science and condensed matter physics.

Key Features

• Precision-engineered four-probe bismuth sample holder

• Designed for high-resolution magnetoresistance measurements

• Compatible with Gaussmeter, nanoammeter/picoammeter, and electromagnet

• Thermal shielding ensures measurement stability

• Suitable for low-field and high-field studies

• Enables plotting of resistance vs. magnetic field strength (B)

• Supports quantitative analysis of carrier mobility and band structure effects

Applications

• Study of semimetallic transport properties

• Detailed investigation of magnetoresistance phenomena

• Analysis of carrier scattering mechanisms

• Research in quantum materials and spintronics

• Ideal for advanced solid-state and materials physics laboratories