The HEX‑RM is a research-grade Hall Effect experimental system designed for high-precision measurement of charge carrier properties in semiconductors. Tailored for university research labs and advanced academic institutions, this system supports both manual and computer-controlled data acquisition, offering superior accuracy, stability, and versatility.

The setup includes a high-sensitivity GaAs or Ge Hall probe, high-resolution digital Gaussmeter, programmable constant current source, and electromagnet with precision power supply. With optional PC connectivity and analysis software, researchers can automatically record, analyze, and export data such as Hall voltage, Hall coefficient, carrier concentration, and mobility under a range of controlled magnetic fields and currents.

Its modular construction and precise electronics make it ideal for experimental solid-state physics, semiconductor material characterization, and magnetotransport research.

🔧 Key Features

• High-precision Hall Probe (Ge/GaAs) for accurate voltage readings

• Digital Gaussmeter with high field resolution

• Programmable constant current source for fine control

• Electromagnet with precision power supply (stable, ripple-free)

• Optional computer interface with real-time data logging software

• Study of carrier type, mobility, Hall coefficient, and more

• Suitable for advanced research and publication-grade experiments

Applications

• Advanced research on semiconductor and semimetal materials

• Measurement of magneto-resistance and Hall voltage

• Determination of carrier concentration and mobility

• Validation of theoretical models in solid-state physics

• High-accuracy studies in electronic material characterization